Surface potential decay on silicon rubber samples at reduced gas pressure
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چکیده
منابع مشابه
Room Temperature and Reduced Pressure Chemical Vapor Deposition of Silicon Carbide on Various Materials Surface
At room temperature, 300 K, silicon carbide film was formed using monomethylsilane gas on the reactive surface prepared using argon plasma. Entire process was performed at reduced pressure of 10 Pa in the argon plasma etcher, without a substrate transfer operation. By this process, the several-nanometer-thick amorphous thin film containing silicon-carbon bonds was obtained on various substrates...
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ژورنال
عنوان ژورنال: Proceedings of the Nordic Insulation Symposium
سال: 2018
ISSN: 2535-3969
DOI: 10.5324/nordis.v0i23.2448